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Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects

We put forward the quantum screening effect in field emission [FE] nanodiodes, explaining relatively low field enhancement factors due to the increased potential barrier that impedes the electron Fowler-Nordheim tunneling, which is usually observed in nanoscale FE experiments. We illustratively show...

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Detalles Bibliográficos
Autores principales: Cheng, Tsung-Chieh, Chen, Pai-Yen, Wu, Shen-Yao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292933/
https://www.ncbi.nlm.nih.gov/pubmed/22333408
http://dx.doi.org/10.1186/1556-276X-7-125
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author Cheng, Tsung-Chieh
Chen, Pai-Yen
Wu, Shen-Yao
author_facet Cheng, Tsung-Chieh
Chen, Pai-Yen
Wu, Shen-Yao
author_sort Cheng, Tsung-Chieh
collection PubMed
description We put forward the quantum screening effect in field emission [FE] nanodiodes, explaining relatively low field enhancement factors due to the increased potential barrier that impedes the electron Fowler-Nordheim tunneling, which is usually observed in nanoscale FE experiments. We illustratively show this effect from the energy band diagram and experimentally verify it by performing the nanomanipulation FE measurement for a single P-silicon nanotip emitter (Φ = 4.94eV), with a scanning tungsten-probe anode (work function, Φ = 4.5eV) that constitutes a 75-nm vacuum nanogap. A macroscopic FE measurement for the arrays of emitters with a 17-μm vacuum microgap was also performed for a fair comparison.
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spelling pubmed-32929332012-03-06 Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects Cheng, Tsung-Chieh Chen, Pai-Yen Wu, Shen-Yao Nanoscale Res Lett Nano Idea We put forward the quantum screening effect in field emission [FE] nanodiodes, explaining relatively low field enhancement factors due to the increased potential barrier that impedes the electron Fowler-Nordheim tunneling, which is usually observed in nanoscale FE experiments. We illustratively show this effect from the energy band diagram and experimentally verify it by performing the nanomanipulation FE measurement for a single P-silicon nanotip emitter (Φ = 4.94eV), with a scanning tungsten-probe anode (work function, Φ = 4.5eV) that constitutes a 75-nm vacuum nanogap. A macroscopic FE measurement for the arrays of emitters with a 17-μm vacuum microgap was also performed for a fair comparison. Springer 2012-02-14 /pmc/articles/PMC3292933/ /pubmed/22333408 http://dx.doi.org/10.1186/1556-276X-7-125 Text en Copyright ©2012 Cheng et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Idea
Cheng, Tsung-Chieh
Chen, Pai-Yen
Wu, Shen-Yao
Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
title Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
title_full Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
title_fullStr Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
title_full_unstemmed Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
title_short Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
title_sort paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects
topic Nano Idea
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292933/
https://www.ncbi.nlm.nih.gov/pubmed/22333408
http://dx.doi.org/10.1186/1556-276X-7-125
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