Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dot...

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Detalles Bibliográficos
Autores principales: Tian, Haitao, Wang, Lu, Shi, Zhenwu, Gao, Huaiju, Zhang, Shuhui, Wang, Wenxin, Chen, Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Original Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3299579/
https://www.ncbi.nlm.nih.gov/pubmed/22333518
http://dx.doi.org/10.1186/1556-276X-7-128

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