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A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CM...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International (MDPI)
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3304160/ https://www.ncbi.nlm.nih.gov/pubmed/22438758 http://dx.doi.org/10.3390/s120202162 |
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author | Xu, Yue Pan, Hong-Bin He, Shu-Zhuan Li, Li |
author_facet | Xu, Yue Pan, Hong-Bin He, Shu-Zhuan Li, Li |
author_sort | Xu, Yue |
collection | PubMed |
description | Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C. |
format | Online Article Text |
id | pubmed-3304160 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Molecular Diversity Preservation International (MDPI) |
record_format | MEDLINE/PubMed |
spelling | pubmed-33041602012-03-21 A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications Xu, Yue Pan, Hong-Bin He, Shu-Zhuan Li, Li Sensors (Basel) Article Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C. Molecular Diversity Preservation International (MDPI) 2012-02-15 /pmc/articles/PMC3304160/ /pubmed/22438758 http://dx.doi.org/10.3390/s120202162 Text en © 2012 by the authors; licensee MDPI, Basel, Switzerland This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Article Xu, Yue Pan, Hong-Bin He, Shu-Zhuan Li, Li A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications |
title | A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications |
title_full | A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications |
title_fullStr | A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications |
title_full_unstemmed | A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications |
title_short | A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications |
title_sort | highly sensitive cmos digital hall sensor for low magnetic field applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3304160/ https://www.ncbi.nlm.nih.gov/pubmed/22438758 http://dx.doi.org/10.3390/s120202162 |
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