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A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CM...

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Detalles Bibliográficos
Autores principales: Xu, Yue, Pan, Hong-Bin, He, Shu-Zhuan, Li, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3304160/
https://www.ncbi.nlm.nih.gov/pubmed/22438758
http://dx.doi.org/10.3390/s120202162
_version_ 1782226845284958208
author Xu, Yue
Pan, Hong-Bin
He, Shu-Zhuan
Li, Li
author_facet Xu, Yue
Pan, Hong-Bin
He, Shu-Zhuan
Li, Li
author_sort Xu, Yue
collection PubMed
description Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C.
format Online
Article
Text
id pubmed-3304160
institution National Center for Biotechnology Information
language English
publishDate 2012
publisher Molecular Diversity Preservation International (MDPI)
record_format MEDLINE/PubMed
spelling pubmed-33041602012-03-21 A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications Xu, Yue Pan, Hong-Bin He, Shu-Zhuan Li, Li Sensors (Basel) Article Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C. Molecular Diversity Preservation International (MDPI) 2012-02-15 /pmc/articles/PMC3304160/ /pubmed/22438758 http://dx.doi.org/10.3390/s120202162 Text en © 2012 by the authors; licensee MDPI, Basel, Switzerland This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Xu, Yue
Pan, Hong-Bin
He, Shu-Zhuan
Li, Li
A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
title A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
title_full A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
title_fullStr A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
title_full_unstemmed A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
title_short A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications
title_sort highly sensitive cmos digital hall sensor for low magnetic field applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3304160/
https://www.ncbi.nlm.nih.gov/pubmed/22438758
http://dx.doi.org/10.3390/s120202162
work_keys_str_mv AT xuyue ahighlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT panhongbin ahighlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT heshuzhuan ahighlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT lili ahighlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT xuyue highlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT panhongbin highlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT heshuzhuan highlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications
AT lili highlysensitivecmosdigitalhallsensorforlowmagneticfieldapplications