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Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces
InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the sa...
Autores principales: | Li, Li-Gong, Liu, Shu-Man, Luo, Shuai, Yang, Tao, Wang, Li-Jun, Liu, Feng-Qi, Ye, Xiao-Ling, Xu, Bo, Wang, Zhan-Guo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3305404/ https://www.ncbi.nlm.nih.gov/pubmed/22373387 http://dx.doi.org/10.1186/1556-276X-7-160 |
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