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Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate
The optical properties of In(0.8)Ga(0.2)As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO(2)-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In(0.8)Ga(0.2)As SAQDs grown...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3311092/ https://www.ncbi.nlm.nih.gov/pubmed/22309499 http://dx.doi.org/10.1186/1556-276X-7-104 |
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author | Kim, Hyo Jin Mothohisa, Junichi Fukui, Takashi |
author_facet | Kim, Hyo Jin Mothohisa, Junichi Fukui, Takashi |
author_sort | Kim, Hyo Jin |
collection | PubMed |
description | The optical properties of In(0.8)Ga(0.2)As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO(2)-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In(0.8)Ga(0.2)As SAQDs grown on SiO(2)-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In(0.8)Ga(0.2)As SAQDs selectively grown by utilizing SiO(2)-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states. |
format | Online Article Text |
id | pubmed-3311092 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-33110922012-03-26 Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate Kim, Hyo Jin Mothohisa, Junichi Fukui, Takashi Nanoscale Res Lett Nano Express The optical properties of In(0.8)Ga(0.2)As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO(2)-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In(0.8)Ga(0.2)As SAQDs grown on SiO(2)-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In(0.8)Ga(0.2)As SAQDs selectively grown by utilizing SiO(2)-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states. Springer 2012-02-06 /pmc/articles/PMC3311092/ /pubmed/22309499 http://dx.doi.org/10.1186/1556-276X-7-104 Text en Copyright ©2012 Kim et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Kim, Hyo Jin Mothohisa, Junichi Fukui, Takashi Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate |
title | Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate |
title_full | Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate |
title_fullStr | Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate |
title_full_unstemmed | Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate |
title_short | Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate |
title_sort | energy state of ingaas quantum dots on sio(2)-patterned vicinal substrate |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3311092/ https://www.ncbi.nlm.nih.gov/pubmed/22309499 http://dx.doi.org/10.1186/1556-276X-7-104 |
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