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Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate

The optical properties of In(0.8)Ga(0.2)As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO(2)-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In(0.8)Ga(0.2)As SAQDs grown...

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Detalles Bibliográficos
Autores principales:	Kim, Hyo Jin, Mothohisa, Junichi, Fukui, Takashi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2012
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3311092/ https://www.ncbi.nlm.nih.gov/pubmed/22309499 http://dx.doi.org/10.1186/1556-276X-7-104

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