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Preparation and characterization of ZnO microcantilever for nanoactuation
Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron micro...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3312835/ https://www.ncbi.nlm.nih.gov/pubmed/22401138 http://dx.doi.org/10.1186/1556-276X-7-176 |
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author | Wang, Peihong Du, Hejun Shen, Shengnan Zhang, Mingsheng Liu, Bo |
author_facet | Wang, Peihong Du, Hejun Shen, Shengnan Zhang, Mingsheng Liu, Bo |
author_sort | Wang, Peihong |
collection | PubMed |
description | Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film shows that it has a high c-axis-preferring orientation, which is confirmed by a FE-SEM cross-sectional image of the film. The EDS analysis indicates that only Zn and O elements are contained in the ZnO film. The AFM image shows that the film's surface is very smooth and dense, and the surface roughness is 5.899 nm. The microcantilever (Au/Ti/ZnO/Au/Ti/SiO(2)/Si) based on the ZnO thin film is fabricated by micromachining techniques. The dynamic characterizations of the cantilever using a laser Doppler vibrometer show that the amplitude of the cantilever tip is linear with the driving voltage, and the amplitude of this microcantilever's tip increased from 2.1 to 13.6 nm when the driving voltage increased from 0.05 to 0.3 V(rms). The calculated transverse piezoelectric constant d(31 )of the ZnO thin film is -3.27 pC/N. This d(31 )is high compared with other published results. This ZnO thin film will be used in smart slider in hard disk drives to do nanoactuation in the future. |
format | Online Article Text |
id | pubmed-3312835 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-33128352012-03-30 Preparation and characterization of ZnO microcantilever for nanoactuation Wang, Peihong Du, Hejun Shen, Shengnan Zhang, Mingsheng Liu, Bo Nanoscale Res Lett Nano Express Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film shows that it has a high c-axis-preferring orientation, which is confirmed by a FE-SEM cross-sectional image of the film. The EDS analysis indicates that only Zn and O elements are contained in the ZnO film. The AFM image shows that the film's surface is very smooth and dense, and the surface roughness is 5.899 nm. The microcantilever (Au/Ti/ZnO/Au/Ti/SiO(2)/Si) based on the ZnO thin film is fabricated by micromachining techniques. The dynamic characterizations of the cantilever using a laser Doppler vibrometer show that the amplitude of the cantilever tip is linear with the driving voltage, and the amplitude of this microcantilever's tip increased from 2.1 to 13.6 nm when the driving voltage increased from 0.05 to 0.3 V(rms). The calculated transverse piezoelectric constant d(31 )of the ZnO thin film is -3.27 pC/N. This d(31 )is high compared with other published results. This ZnO thin film will be used in smart slider in hard disk drives to do nanoactuation in the future. Springer 2012-03-08 /pmc/articles/PMC3312835/ /pubmed/22401138 http://dx.doi.org/10.1186/1556-276X-7-176 Text en Copyright ©2012 Wang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Wang, Peihong Du, Hejun Shen, Shengnan Zhang, Mingsheng Liu, Bo Preparation and characterization of ZnO microcantilever for nanoactuation |
title | Preparation and characterization of ZnO microcantilever for nanoactuation |
title_full | Preparation and characterization of ZnO microcantilever for nanoactuation |
title_fullStr | Preparation and characterization of ZnO microcantilever for nanoactuation |
title_full_unstemmed | Preparation and characterization of ZnO microcantilever for nanoactuation |
title_short | Preparation and characterization of ZnO microcantilever for nanoactuation |
title_sort | preparation and characterization of zno microcantilever for nanoactuation |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3312835/ https://www.ncbi.nlm.nih.gov/pubmed/22401138 http://dx.doi.org/10.1186/1556-276X-7-176 |
work_keys_str_mv | AT wangpeihong preparationandcharacterizationofznomicrocantileverfornanoactuation AT duhejun preparationandcharacterizationofznomicrocantileverfornanoactuation AT shenshengnan preparationandcharacterizationofznomicrocantileverfornanoactuation AT zhangmingsheng preparationandcharacterizationofznomicrocantileverfornanoactuation AT liubo preparationandcharacterizationofznomicrocantileverfornanoactuation |