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Preparation and characterization of ZnO microcantilever for nanoactuation

Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron micro...

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Detalles Bibliográficos
Autores principales: Wang, Peihong, Du, Hejun, Shen, Shengnan, Zhang, Mingsheng, Liu, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3312835/
https://www.ncbi.nlm.nih.gov/pubmed/22401138
http://dx.doi.org/10.1186/1556-276X-7-176
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author Wang, Peihong
Du, Hejun
Shen, Shengnan
Zhang, Mingsheng
Liu, Bo
author_facet Wang, Peihong
Du, Hejun
Shen, Shengnan
Zhang, Mingsheng
Liu, Bo
author_sort Wang, Peihong
collection PubMed
description Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film shows that it has a high c-axis-preferring orientation, which is confirmed by a FE-SEM cross-sectional image of the film. The EDS analysis indicates that only Zn and O elements are contained in the ZnO film. The AFM image shows that the film's surface is very smooth and dense, and the surface roughness is 5.899 nm. The microcantilever (Au/Ti/ZnO/Au/Ti/SiO(2)/Si) based on the ZnO thin film is fabricated by micromachining techniques. The dynamic characterizations of the cantilever using a laser Doppler vibrometer show that the amplitude of the cantilever tip is linear with the driving voltage, and the amplitude of this microcantilever's tip increased from 2.1 to 13.6 nm when the driving voltage increased from 0.05 to 0.3 V(rms). The calculated transverse piezoelectric constant d(31 )of the ZnO thin film is -3.27 pC/N. This d(31 )is high compared with other published results. This ZnO thin film will be used in smart slider in hard disk drives to do nanoactuation in the future.
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spelling pubmed-33128352012-03-30 Preparation and characterization of ZnO microcantilever for nanoactuation Wang, Peihong Du, Hejun Shen, Shengnan Zhang, Mingsheng Liu, Bo Nanoscale Res Lett Nano Express Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film shows that it has a high c-axis-preferring orientation, which is confirmed by a FE-SEM cross-sectional image of the film. The EDS analysis indicates that only Zn and O elements are contained in the ZnO film. The AFM image shows that the film's surface is very smooth and dense, and the surface roughness is 5.899 nm. The microcantilever (Au/Ti/ZnO/Au/Ti/SiO(2)/Si) based on the ZnO thin film is fabricated by micromachining techniques. The dynamic characterizations of the cantilever using a laser Doppler vibrometer show that the amplitude of the cantilever tip is linear with the driving voltage, and the amplitude of this microcantilever's tip increased from 2.1 to 13.6 nm when the driving voltage increased from 0.05 to 0.3 V(rms). The calculated transverse piezoelectric constant d(31 )of the ZnO thin film is -3.27 pC/N. This d(31 )is high compared with other published results. This ZnO thin film will be used in smart slider in hard disk drives to do nanoactuation in the future. Springer 2012-03-08 /pmc/articles/PMC3312835/ /pubmed/22401138 http://dx.doi.org/10.1186/1556-276X-7-176 Text en Copyright ©2012 Wang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Wang, Peihong
Du, Hejun
Shen, Shengnan
Zhang, Mingsheng
Liu, Bo
Preparation and characterization of ZnO microcantilever for nanoactuation
title Preparation and characterization of ZnO microcantilever for nanoactuation
title_full Preparation and characterization of ZnO microcantilever for nanoactuation
title_fullStr Preparation and characterization of ZnO microcantilever for nanoactuation
title_full_unstemmed Preparation and characterization of ZnO microcantilever for nanoactuation
title_short Preparation and characterization of ZnO microcantilever for nanoactuation
title_sort preparation and characterization of zno microcantilever for nanoactuation
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3312835/
https://www.ncbi.nlm.nih.gov/pubmed/22401138
http://dx.doi.org/10.1186/1556-276X-7-176
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