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Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films
In this work, bipolar resistive switching characteristics were demonstrated in the Pt/ZnO/Pt structure. Reliability tests show that ac cycling endurance level above 10(6 )can be achieved. However, significant window closure takes place after about 10(2 )dc cycles. Data retention characteristic exhib...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3325859/ https://www.ncbi.nlm.nih.gov/pubmed/22401297 http://dx.doi.org/10.1186/1556-276X-7-178 |