A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n(+)-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously ser...

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Detalles Bibliográficos
Autores principales: Su, Chun-Jung, Su, Tuan-Kai, Tsai, Tzu-I, Lin, Horng-Chih, Huang, Tiao-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3337285/
https://www.ncbi.nlm.nih.gov/pubmed/22373446
http://dx.doi.org/10.1186/1556-276X-7-162

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3337285/
https://www.ncbi.nlm.nih.gov/pubmed/22373446
http://dx.doi.org/10.1186/1556-276X-7-162

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