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A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n(+)-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously ser...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3337285/ https://www.ncbi.nlm.nih.gov/pubmed/22373446 http://dx.doi.org/10.1186/1556-276X-7-162 |