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Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO(3 )solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lit...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3339842/ https://www.ncbi.nlm.nih.gov/pubmed/22087735 http://dx.doi.org/10.1186/1556-276X-6-597 |