Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction

We studied the early stages of Gd(2)O(3 )epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy ele...

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Detalles Bibliográficos
Autores principales: Hanke, Michael, Kaganer, Vladimir M, Bierwagen, Oliver, Niehle, Michael, Trampert, Achim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3343629/
https://www.ncbi.nlm.nih.gov/pubmed/22458962
http://dx.doi.org/10.1186/1556-276X-7-203
Descripción
Sumario:We studied the early stages of Gd(2)O(3 )epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd(2)O(3 )appears only after a few monolayers of deposition.

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