Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction

We studied the early stages of Gd(2)O(3 )epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy ele...

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Detalles Bibliográficos
Autores principales: Hanke, Michael, Kaganer, Vladimir M, Bierwagen, Oliver, Niehle, Michael, Trampert, Achim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3343629/
https://www.ncbi.nlm.nih.gov/pubmed/22458962
http://dx.doi.org/10.1186/1556-276X-7-203
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author Hanke, Michael
Kaganer, Vladimir M
Bierwagen, Oliver
Niehle, Michael
Trampert, Achim
author_facet Hanke, Michael
Kaganer, Vladimir M
Bierwagen, Oliver
Niehle, Michael
Trampert, Achim
author_sort Hanke, Michael
collection PubMed
description We studied the early stages of Gd(2)O(3 )epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd(2)O(3 )appears only after a few monolayers of deposition.
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spelling pubmed-33436292012-05-07 Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction Hanke, Michael Kaganer, Vladimir M Bierwagen, Oliver Niehle, Michael Trampert, Achim Nanoscale Res Lett Nano Express We studied the early stages of Gd(2)O(3 )epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd(2)O(3 )appears only after a few monolayers of deposition. Springer 2012-03-29 /pmc/articles/PMC3343629/ /pubmed/22458962 http://dx.doi.org/10.1186/1556-276X-7-203 Text en Copyright ©2012 Hanke et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Hanke, Michael
Kaganer, Vladimir M
Bierwagen, Oliver
Niehle, Michael
Trampert, Achim
Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction
title Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction
title_full Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction
title_fullStr Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction
title_full_unstemmed Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction
title_short Delayed crystallization of ultrathin Gd(2)O(3 )layers on Si(111) observed by in situ X-ray diffraction
title_sort delayed crystallization of ultrathin gd(2)o(3 )layers on si(111) observed by in situ x-ray diffraction
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3343629/
https://www.ncbi.nlm.nih.gov/pubmed/22458962
http://dx.doi.org/10.1186/1556-276X-7-203
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