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Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage

This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The resonator is made of aluminum, and the sacrificial layer is silicon dioxide...

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Detalles Bibliográficos
Autores principales:	Kao, Pin-Hsu, Dai, Ching-Liang, Hsu, Cheng-Chih, Lee, Chi-Yuan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Molecular Diversity Preservation International (MDPI) 2009
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3345836/ https://www.ncbi.nlm.nih.gov/pubmed/22574000 http://dx.doi.org/10.3390/s90302062

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