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Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high...

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Detalles Bibliográficos
Autores principales:	Zhang, Jia-Hong, Huang, Qing-An, Yu, Hong, Lei, Shuang-Ying
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Molecular Diversity Preservation International (MDPI) 2009
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3348805/ https://www.ncbi.nlm.nih.gov/pubmed/22574043 http://dx.doi.org/10.3390/s90402746

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