Fabrication of Submicron Beams with Galvanic Etch Stop for Si in TMAH

A novel method has been developed to fabricate submicron beams with galvanic etch stop for Si in TMAH. The different Au:Si area ratios before and after the release of the beams are used to trigger the galvanic etch stop to fabricate submicron single crystal Si beams in standard Si wafers. Before the...

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Detalles Bibliográficos
Autores principales: Lu, Rong, Wu, Yanhong, Cheng, Haitao, Yang, Heng, Li, Xinxin, Wang, Yuelin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2009
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3348845/
https://www.ncbi.nlm.nih.gov/pubmed/22574025
http://dx.doi.org/10.3390/s90402470

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3348845/
https://www.ncbi.nlm.nih.gov/pubmed/22574025
http://dx.doi.org/10.3390/s90402470

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