On the simple random-walk models of ion-channel gate dynamics reflecting long-term memory

Several approaches to ion-channel gating modelling have been proposed. Although many models describe the dwell-time distributions correctly, they are incapable of predicting and explaining the long-term correlations between the lengths of adjacent openings and closings of a channel. In this paper we...

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Detalles Bibliográficos
Autores principales: Wawrzkiewicz, Agata, Pawelek, Krzysztof, Borys, Przemyslaw, Dworakowska, Beata, Grzywna, Zbigniew J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer-Verlag 2012
Materias:
Original Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3359465/
https://www.ncbi.nlm.nih.gov/pubmed/22484857
http://dx.doi.org/10.1007/s00249-012-0806-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3359465/
https://www.ncbi.nlm.nih.gov/pubmed/22484857
http://dx.doi.org/10.1007/s00249-012-0806-8

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