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On the simple random-walk models of ion-channel gate dynamics reflecting long-term memory
Several approaches to ion-channel gating modelling have been proposed. Although many models describe the dwell-time distributions correctly, they are incapable of predicting and explaining the long-term correlations between the lengths of adjacent openings and closings of a channel. In this paper we...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer-Verlag
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3359465/ https://www.ncbi.nlm.nih.gov/pubmed/22484857 http://dx.doi.org/10.1007/s00249-012-0806-8 |