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Chirped InGaAs quantum dot molecules for broadband applications

Lateral InGaAs quantum dot molecules (QDMs) formed by partial-cap and regrowth technique exhibit two ground-state (GS) peaks controllable via the thicknesses of InAs seed quantum dots (x), GaAs cap (y), and InAs regrowth (z). By adjusting x/y/z in a stacked QDM bilayer, the GS peaks from the two lay...

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Detalles Bibliográficos
Autores principales:	Patanasemakul, Nirat, Panyakeow, Somsak, Kanjanachuchai, Songphol
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2012
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3379949/ https://www.ncbi.nlm.nih.gov/pubmed/22480323 http://dx.doi.org/10.1186/1556-276X-7-207

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