Cargando…
Unraveling Metal-insulator Transition Mechanism of VO(2 )Triggered by Tungsten Doping
Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calc...
Autores principales: | Tan, Xiaogang, Yao, Tao, Long, Ran, Sun, Zhihu, Feng, Yajuan, Cheng, Hao, Yuan, Xun, Zhang, Wenqing, Liu, Qinghua, Wu, Changzheng, Xie, Yi, Wei, Shiqiang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3381290/ https://www.ncbi.nlm.nih.gov/pubmed/22737402 http://dx.doi.org/10.1038/srep00466 |
Ejemplares similares
-
Tuning the Metal–Insulator Transition Properties of VO(2) Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping
por: Basyooni, Mohamed A., et al.
Publicado: (2022) -
Magnetic-field-induced insulator–metal transition in W-doped VO(2) at 500 T
por: Matsuda, Yasuhiro H., et al.
Publicado: (2020) -
Temperature-dependent infrared ellipsometry of Mo-doped VO(2) thin films across the insulator to metal transition
por: Amador-Alvarado, S., et al.
Publicado: (2020) -
Tunable resistivity of correlated VO(2)(A) and VO(2)(B) via tungsten doping
por: Choi, Songhee, et al.
Publicado: (2020) -
The influence of structural disorder and phonon on metal-to-insulator transition of VO(2)
por: Hwang, In-Hui, et al.
Publicado: (2017)