Cargando…
Polarized recombination of acoustically transported carriers in GaAs nanowires
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO(3) crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a secon...
Autores principales: | Möller, Michael, Hernández-Mínguez, Alberto, Breuer, Steffen, Pfüller, Carsten, Brandt, Oliver, de Lima, Mauricio M, Cantarero, Andrés, Geelhaar, Lutz, Riechert, Henning, Santos, Paulo V |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3413508/ https://www.ncbi.nlm.nih.gov/pubmed/22583747 http://dx.doi.org/10.1186/1556-276X-7-247 |
Ejemplares similares
-
Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
por: Davydok, Anton, et al.
Publicado: (2012) -
Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016) -
Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
por: Wu, Yao, et al.
Publicado: (2018) -
Optimization of Ohmic Contacts to p-GaAs Nanowires
por: Rizzo Piton, Marcelo, et al.
Publicado: (2019) -
Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)