Cargando…
Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes
In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The...
Autores principales: | Lin, Chu-Hsuan, Yeh, Wei-Ting, Chan, Chun-Hui, Lin, Chun-Chieh |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3413602/ https://www.ncbi.nlm.nih.gov/pubmed/22734469 http://dx.doi.org/10.1186/1556-276X-7-343 |
Ejemplares similares
-
Passivation ability of graphene oxide demonstrated by two-different-metal solar cells
por: Hsu, Wen-Tzu, et al.
Publicado: (2014) -
Spin injection in n-type resonant tunneling diodes
por: Orsi Gordo, Vanessa, et al.
Publicado: (2012) -
Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes
por: Kuo, Tsung-Rong, et al.
Publicado: (2017) -
Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques
por: Lee, Hsin-Ying, et al.
Publicado: (2014) -
Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al(2)O(3) as Dielectric Layers
por: Wang, X., et al.
Publicado: (2016)