Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al(2)O(3) stack structure using an implant-free technique

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al(2)O(3) gate stack using an implant-free approach. Since the source/drain and channel regions are sharing one in situ phosphorous-doped poly-Si material, the process flow and cost could be efficiently reduced. Owing to the GAA configuration and small volume of NW channels, the fabricated devices with heavily doped channels display superior switching behaviors and excellent immunity to short-channel effects. Besides, the negative fixed charges in Al(2)O(3) are found to be helpful to obtain desirable positive threshold voltages for the n(+)-poly-Si channel devices. Thus, the simple and low-cost fabrication method along with excellent device characteristics makes the proposed GAA NW transistor a promising candidate for future 3-D electronics and system-on-panel applications.