Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al(2)O(3) stack structure using an implant-free technique

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al(2)O(3) gate stack using an implant-free approach. Since the source/drain and channel regions are sharing one in situ phosphorous-doped poly-Si material, the process flow and cost co...

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Detalles Bibliográficos
Autores principales: Su, Chun-Jung, Tsai, Tzu-I, Lin, Horng-Chih, Huang, Tiao-Yuan, Chao, Tien-Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3422205/
https://www.ncbi.nlm.nih.gov/pubmed/22726886
http://dx.doi.org/10.1186/1556-276X-7-339

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3422205/
https://www.ncbi.nlm.nih.gov/pubmed/22726886
http://dx.doi.org/10.1186/1556-276X-7-339

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