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Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al(2)O(3) stack structure using an implant-free technique
In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al(2)O(3) gate stack using an implant-free approach. Since the source/drain and channel regions are sharing one in situ phosphorous-doped poly-Si material, the process flow and cost co...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3422205/ https://www.ncbi.nlm.nih.gov/pubmed/22726886 http://dx.doi.org/10.1186/1556-276X-7-339 |