Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD

In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indiu...

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Detalles Bibliográficos
Autores principales: Sun, Xiaojuan, Li, Dabing, Song, Hang, Chen, Yiren, Jiang, Hong, Miao, Guoqing, Li, Zhiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3442964/
https://www.ncbi.nlm.nih.gov/pubmed/22650991
http://dx.doi.org/10.1186/1556-276X-7-282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3442964/
https://www.ncbi.nlm.nih.gov/pubmed/22650991
http://dx.doi.org/10.1186/1556-276X-7-282

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