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Plasma-deposited fluoropolymer film mask for local porous silicon formation

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unl...

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Detalles Bibliográficos
Autores principales: Defforge, Thomas, Capelle, Marie, Tran-Van, François, Gautier, Gaël
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3443000/
https://www.ncbi.nlm.nih.gov/pubmed/22734507
http://dx.doi.org/10.1186/1556-276X-7-344
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author Defforge, Thomas
Capelle, Marie
Tran-Van, François
Gautier, Gaël
author_facet Defforge, Thomas
Capelle, Marie
Tran-Van, François
Gautier, Gaël
author_sort Defforge, Thomas
collection PubMed
description The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p(+)-type and low-doped n-type silicon substrates.
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spelling pubmed-34430002012-09-17 Plasma-deposited fluoropolymer film mask for local porous silicon formation Defforge, Thomas Capelle, Marie Tran-Van, François Gautier, Gaël Nanoscale Res Lett Nano Express The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p(+)-type and low-doped n-type silicon substrates. Springer 2012-06-26 /pmc/articles/PMC3443000/ /pubmed/22734507 http://dx.doi.org/10.1186/1556-276X-7-344 Text en Copyright ©2012 Defforge et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Defforge, Thomas
Capelle, Marie
Tran-Van, François
Gautier, Gaël
Plasma-deposited fluoropolymer film mask for local porous silicon formation
title Plasma-deposited fluoropolymer film mask for local porous silicon formation
title_full Plasma-deposited fluoropolymer film mask for local porous silicon formation
title_fullStr Plasma-deposited fluoropolymer film mask for local porous silicon formation
title_full_unstemmed Plasma-deposited fluoropolymer film mask for local porous silicon formation
title_short Plasma-deposited fluoropolymer film mask for local porous silicon formation
title_sort plasma-deposited fluoropolymer film mask for local porous silicon formation
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3443000/
https://www.ncbi.nlm.nih.gov/pubmed/22734507
http://dx.doi.org/10.1186/1556-276X-7-344
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