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Plasma-deposited fluoropolymer film mask for local porous silicon formation
The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unl...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3443000/ https://www.ncbi.nlm.nih.gov/pubmed/22734507 http://dx.doi.org/10.1186/1556-276X-7-344 |
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author | Defforge, Thomas Capelle, Marie Tran-Van, François Gautier, Gaël |
author_facet | Defforge, Thomas Capelle, Marie Tran-Van, François Gautier, Gaël |
author_sort | Defforge, Thomas |
collection | PubMed |
description | The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p(+)-type and low-doped n-type silicon substrates. |
format | Online Article Text |
id | pubmed-3443000 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-34430002012-09-17 Plasma-deposited fluoropolymer film mask for local porous silicon formation Defforge, Thomas Capelle, Marie Tran-Van, François Gautier, Gaël Nanoscale Res Lett Nano Express The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p(+)-type and low-doped n-type silicon substrates. Springer 2012-06-26 /pmc/articles/PMC3443000/ /pubmed/22734507 http://dx.doi.org/10.1186/1556-276X-7-344 Text en Copyright ©2012 Defforge et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Defforge, Thomas Capelle, Marie Tran-Van, François Gautier, Gaël Plasma-deposited fluoropolymer film mask for local porous silicon formation |
title | Plasma-deposited fluoropolymer film mask for local porous silicon formation |
title_full | Plasma-deposited fluoropolymer film mask for local porous silicon formation |
title_fullStr | Plasma-deposited fluoropolymer film mask for local porous silicon formation |
title_full_unstemmed | Plasma-deposited fluoropolymer film mask for local porous silicon formation |
title_short | Plasma-deposited fluoropolymer film mask for local porous silicon formation |
title_sort | plasma-deposited fluoropolymer film mask for local porous silicon formation |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3443000/ https://www.ncbi.nlm.nih.gov/pubmed/22734507 http://dx.doi.org/10.1186/1556-276X-7-344 |
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