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Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

In this work the applicability of neopentasilane (Si(SiH(3))(4)) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon co...

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Detalles Bibliográficos
Autores principales: Kämpken, Britta, Wulf, Verena, Auner, Norbert, Winhold, Marcel, Huth, Michael, Rhinow, Daniel, Terfort, Andreas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3458599/
https://www.ncbi.nlm.nih.gov/pubmed/23019549
http://dx.doi.org/10.3762/bjnano.3.62
Descripción
Sumario:In this work the applicability of neopentasilane (Si(SiH(3))(4)) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.