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Photoluminescence enhancement in CdS quantum dots by thermal annealing

The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a...

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Autores principales: Kim, Jae Ik, Kim, Jongmin, Lee, Junhee, Jung, Dae-Ryong, Kim, Hoechang, Choi, Hongsik, Lee, Sungjun, Byun, Sujin, Kang, Suji, Park, Byungwoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3465252/
https://www.ncbi.nlm.nih.gov/pubmed/22931230
http://dx.doi.org/10.1186/1556-276X-7-482
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author Kim, Jae Ik
Kim, Jongmin
Lee, Junhee
Jung, Dae-Ryong
Kim, Hoechang
Choi, Hongsik
Lee, Sungjun
Byun, Sujin
Kang, Suji
Park, Byungwoo
author_facet Kim, Jae Ik
Kim, Jongmin
Lee, Junhee
Jung, Dae-Ryong
Kim, Hoechang
Choi, Hongsik
Lee, Sungjun
Byun, Sujin
Kang, Suji
Park, Byungwoo
author_sort Kim, Jae Ik
collection PubMed
description The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process.
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spelling pubmed-34652522012-10-09 Photoluminescence enhancement in CdS quantum dots by thermal annealing Kim, Jae Ik Kim, Jongmin Lee, Junhee Jung, Dae-Ryong Kim, Hoechang Choi, Hongsik Lee, Sungjun Byun, Sujin Kang, Suji Park, Byungwoo Nanoscale Res Lett Nano Express The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process. Springer 2012-08-29 /pmc/articles/PMC3465252/ /pubmed/22931230 http://dx.doi.org/10.1186/1556-276X-7-482 Text en Copyright ©2012 Kim et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Kim, Jae Ik
Kim, Jongmin
Lee, Junhee
Jung, Dae-Ryong
Kim, Hoechang
Choi, Hongsik
Lee, Sungjun
Byun, Sujin
Kang, Suji
Park, Byungwoo
Photoluminescence enhancement in CdS quantum dots by thermal annealing
title Photoluminescence enhancement in CdS quantum dots by thermal annealing
title_full Photoluminescence enhancement in CdS quantum dots by thermal annealing
title_fullStr Photoluminescence enhancement in CdS quantum dots by thermal annealing
title_full_unstemmed Photoluminescence enhancement in CdS quantum dots by thermal annealing
title_short Photoluminescence enhancement in CdS quantum dots by thermal annealing
title_sort photoluminescence enhancement in cds quantum dots by thermal annealing
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3465252/
https://www.ncbi.nlm.nih.gov/pubmed/22931230
http://dx.doi.org/10.1186/1556-276X-7-482
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