Cargando…

The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition

This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not...

Descripción completa

Detalles Bibliográficos
Autores principales: Vorobiev, Yuri V, Horley, Paul P, Hernández-Borja, Jorge, Esparza-Ponce, Hilda E, Ramírez-Bon, Rafael, Vorobiev, Pavel, Pérez, Claudia, González-Hernández, Jesús
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3475102/
https://www.ncbi.nlm.nih.gov/pubmed/22931255
http://dx.doi.org/10.1186/1556-276X-7-483
_version_ 1782246906141868032
author Vorobiev, Yuri V
Horley, Paul P
Hernández-Borja, Jorge
Esparza-Ponce, Hilda E
Ramírez-Bon, Rafael
Vorobiev, Pavel
Pérez, Claudia
González-Hernández, Jesús
author_facet Vorobiev, Yuri V
Horley, Paul P
Hernández-Borja, Jorge
Esparza-Ponce, Hilda E
Ramírez-Bon, Rafael
Vorobiev, Pavel
Pérez, Claudia
González-Hernández, Jesús
author_sort Vorobiev, Yuri V
collection PubMed
description This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data.
format Online
Article
Text
id pubmed-3475102
institution National Center for Biotechnology Information
language English
publishDate 2012
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-34751022012-10-22 The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition Vorobiev, Yuri V Horley, Paul P Hernández-Borja, Jorge Esparza-Ponce, Hilda E Ramírez-Bon, Rafael Vorobiev, Pavel Pérez, Claudia González-Hernández, Jesús Nanoscale Res Lett Nano Express This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data. Springer 2012-08-29 /pmc/articles/PMC3475102/ /pubmed/22931255 http://dx.doi.org/10.1186/1556-276X-7-483 Text en Copyright ©2012 Vorobiev et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Vorobiev, Yuri V
Horley, Paul P
Hernández-Borja, Jorge
Esparza-Ponce, Hilda E
Ramírez-Bon, Rafael
Vorobiev, Pavel
Pérez, Claudia
González-Hernández, Jesús
The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
title The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
title_full The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
title_fullStr The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
title_full_unstemmed The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
title_short The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
title_sort effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3475102/
https://www.ncbi.nlm.nih.gov/pubmed/22931255
http://dx.doi.org/10.1186/1556-276X-7-483
work_keys_str_mv AT vorobievyuriv theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT horleypaulp theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT hernandezborjajorge theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT esparzaponcehildae theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT ramirezbonrafael theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT vorobievpavel theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT perezclaudia theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT gonzalezhernandezjesus theeffectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT vorobievyuriv effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT horleypaulp effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT hernandezborjajorge effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT esparzaponcehildae effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT ramirezbonrafael effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT vorobievpavel effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT perezclaudia effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition
AT gonzalezhernandezjesus effectsofporosityonopticalpropertiesofsemiconductorchalcogenidefilmsobtainedbythechemicalbathdeposition