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The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain
The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformati...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Public Library of Science
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3477161/ https://www.ncbi.nlm.nih.gov/pubmed/23094020 http://dx.doi.org/10.1371/journal.pone.0045880 |
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author | Schwaiger, Christine S. Börjesson, Sara I. Hess, Berk Wallner, Björn Elinder, Fredrik Lindahl, Erik |
author_facet | Schwaiger, Christine S. Börjesson, Sara I. Hess, Berk Wallner, Björn Elinder, Fredrik Lindahl, Erik |
author_sort | Schwaiger, Christine S. |
collection | PubMed |
description | The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformations during gating. However, the exact conformational changes are not known in detail. For instance, it has been suggested that there is a local rotation in the helix corresponding to short segments of a 3[Image: see text]-helix moving along S4 during opening and closing. Here, we have explored the energetics of the transition between the fully open state (based on the X-ray structure) and the first intermediate state towards channel closing (C[Image: see text]), modeled from experimental constraints. We show that conformations within 3 Å of the X-ray structure are obtained in simulations starting from the C[Image: see text] model, and directly observe the previously suggested sliding 3[Image: see text]-helix region in S4. Through systematic free energy calculations, we show that the C[Image: see text] state is a stable intermediate conformation and determine free energy profiles for moving between the states without constraints. Mutations indicate several residues in a narrow hydrophobic band in the voltage sensor contribute to the barrier between the open and C[Image: see text] states, with F233 in the S2 helix having the largest influence. Substitution for smaller amino acids reduces the transition cost, while introduction of a larger ring increases it, largely confirming experimental activation shift results. There is a systematic correlation between the local aromatic ring rotation, the arginine barrier crossing, and the corresponding relative free energy. In particular, it appears to be more advantageous for the F233 side chain to rotate towards the extracellular side when arginines cross the hydrophobic region. |
format | Online Article Text |
id | pubmed-3477161 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Public Library of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-34771612012-10-23 The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain Schwaiger, Christine S. Börjesson, Sara I. Hess, Berk Wallner, Björn Elinder, Fredrik Lindahl, Erik PLoS One Research Article The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformations during gating. However, the exact conformational changes are not known in detail. For instance, it has been suggested that there is a local rotation in the helix corresponding to short segments of a 3[Image: see text]-helix moving along S4 during opening and closing. Here, we have explored the energetics of the transition between the fully open state (based on the X-ray structure) and the first intermediate state towards channel closing (C[Image: see text]), modeled from experimental constraints. We show that conformations within 3 Å of the X-ray structure are obtained in simulations starting from the C[Image: see text] model, and directly observe the previously suggested sliding 3[Image: see text]-helix region in S4. Through systematic free energy calculations, we show that the C[Image: see text] state is a stable intermediate conformation and determine free energy profiles for moving between the states without constraints. Mutations indicate several residues in a narrow hydrophobic band in the voltage sensor contribute to the barrier between the open and C[Image: see text] states, with F233 in the S2 helix having the largest influence. Substitution for smaller amino acids reduces the transition cost, while introduction of a larger ring increases it, largely confirming experimental activation shift results. There is a systematic correlation between the local aromatic ring rotation, the arginine barrier crossing, and the corresponding relative free energy. In particular, it appears to be more advantageous for the F233 side chain to rotate towards the extracellular side when arginines cross the hydrophobic region. Public Library of Science 2012-10-19 /pmc/articles/PMC3477161/ /pubmed/23094020 http://dx.doi.org/10.1371/journal.pone.0045880 Text en © 2012 Schwaiger et al http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are properly credited. |
spellingShingle | Research Article Schwaiger, Christine S. Börjesson, Sara I. Hess, Berk Wallner, Björn Elinder, Fredrik Lindahl, Erik The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain |
title | The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain |
title_full | The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain |
title_fullStr | The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain |
title_full_unstemmed | The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain |
title_short | The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain |
title_sort | free energy barrier for arginine gating charge translation is altered by mutations in the voltage sensor domain |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3477161/ https://www.ncbi.nlm.nih.gov/pubmed/23094020 http://dx.doi.org/10.1371/journal.pone.0045880 |
work_keys_str_mv | AT schwaigerchristines thefreeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT borjessonsarai thefreeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT hessberk thefreeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT wallnerbjorn thefreeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT elinderfredrik thefreeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT lindahlerik thefreeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT schwaigerchristines freeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT borjessonsarai freeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT hessberk freeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT wallnerbjorn freeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT elinderfredrik freeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain AT lindahlerik freeenergybarrierforargininegatingchargetranslationisalteredbymutationsinthevoltagesensordomain |