Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy e...

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Detalles Bibliográficos
Autores principales: Benyoucef, Mohamed, Zuerbig, Verena, Reithmaier, Johann Peter, Kroh, Tim, Schell, Andreas W, Aichele, Thomas, Benson, Oliver
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494552/
https://www.ncbi.nlm.nih.gov/pubmed/22937992
http://dx.doi.org/10.1186/1556-276X-7-493
Descripción
Sumario:The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.

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