Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy e...

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Detalles Bibliográficos
Autores principales: Benyoucef, Mohamed, Zuerbig, Verena, Reithmaier, Johann Peter, Kroh, Tim, Schell, Andreas W, Aichele, Thomas, Benson, Oliver
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494552/
https://www.ncbi.nlm.nih.gov/pubmed/22937992
http://dx.doi.org/10.1186/1556-276X-7-493
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author Benyoucef, Mohamed
Zuerbig, Verena
Reithmaier, Johann Peter
Kroh, Tim
Schell, Andreas W
Aichele, Thomas
Benson, Oliver
author_facet Benyoucef, Mohamed
Zuerbig, Verena
Reithmaier, Johann Peter
Kroh, Tim
Schell, Andreas W
Aichele, Thomas
Benson, Oliver
author_sort Benyoucef, Mohamed
collection PubMed
description The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
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spelling pubmed-34945522012-11-13 Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature Benyoucef, Mohamed Zuerbig, Verena Reithmaier, Johann Peter Kroh, Tim Schell, Andreas W Aichele, Thomas Benson, Oliver Nanoscale Res Lett Nano Express The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function. Springer 2012-08-31 /pmc/articles/PMC3494552/ /pubmed/22937992 http://dx.doi.org/10.1186/1556-276X-7-493 Text en Copyright ©2012 Benyoucef et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Benyoucef, Mohamed
Zuerbig, Verena
Reithmaier, Johann Peter
Kroh, Tim
Schell, Andreas W
Aichele, Thomas
Benson, Oliver
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
title Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
title_full Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
title_fullStr Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
title_full_unstemmed Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
title_short Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
title_sort single-photon emission from single ingaas/gaas quantum dots grown by droplet epitaxy at high substrate temperature
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494552/
https://www.ncbi.nlm.nih.gov/pubmed/22937992
http://dx.doi.org/10.1186/1556-276X-7-493
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