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Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external i...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/ https://www.ncbi.nlm.nih.gov/pubmed/22937963 http://dx.doi.org/10.1186/1556-276X-7-492 |