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Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching
A new method of fabricating high aspect ratio nanostructures in silicon without the use of sub-micron lithographic technique is reported. The proposed method comprises two important steps including the use of CMOS spacer technique to form silicon nitride nanostructure masking followed by deep reacti...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3502542/ https://www.ncbi.nlm.nih.gov/pubmed/22672745 http://dx.doi.org/10.1186/1556-276X-7-288 |