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Semiconductor nanomembranes: a platform for new properties via strain engineering
New phenomena arise in single-crystal semiconductors when these are fabricated in very thin sheets, with thickness at the nanometer scale. We review recent research on Si and Ge nanomembranes, including the use of elastic strain sharing, layer release, and transfer, that demonstrate new science and...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3506464/ https://www.ncbi.nlm.nih.gov/pubmed/23153167 http://dx.doi.org/10.1186/1556-276X-7-628 |