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RF performances of inductors integrated on localized p(+)-type porous silicon regions
To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is int...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3506491/ https://www.ncbi.nlm.nih.gov/pubmed/23009746 http://dx.doi.org/10.1186/1556-276X-7-523 |