Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content...

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Detalles Bibliográficos
Autores principales: Robert, Cedric, Thanh, Tra Nguyen, Cornet, Charles, Turban, Pascal, Perrin, Mathieu, Balocchi, Andrea, Folliot, Herve, Bertru, Nicolas, Pedesseau, Laurent, Nestoklon, Mikhail O, Even, Jacky, Jancu, Jean-Marc, Tricot, Sylvain, Durand, Olivier, Marie, Xavier, Le Corre, Alain
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3511258/
https://www.ncbi.nlm.nih.gov/pubmed/23176537
http://dx.doi.org/10.1186/1556-276X-7-643
Descripción
Sumario:(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.

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