Junction investigation of graphene/silicon Schottky diodes

Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properti...

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Detalles Bibliográficos
Autores principales: Mohammed, Muatez, Li, Zhongrui, Cui, Jingbiao, Chen, Tar-pin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512491/
https://www.ncbi.nlm.nih.gov/pubmed/22687246
http://dx.doi.org/10.1186/1556-276X-7-302
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author Mohammed, Muatez
Li, Zhongrui
Cui, Jingbiao
Chen, Tar-pin
author_facet Mohammed, Muatez
Li, Zhongrui
Cui, Jingbiao
Chen, Tar-pin
author_sort Mohammed, Muatez
collection PubMed
description Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.
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spelling pubmed-35124912012-12-04 Junction investigation of graphene/silicon Schottky diodes Mohammed, Muatez Li, Zhongrui Cui, Jingbiao Chen, Tar-pin Nanoscale Res Lett Nano Express Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability. Springer 2012-06-11 /pmc/articles/PMC3512491/ /pubmed/22687246 http://dx.doi.org/10.1186/1556-276X-7-302 Text en Copyright ©2012 Mohammed et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Mohammed, Muatez
Li, Zhongrui
Cui, Jingbiao
Chen, Tar-pin
Junction investigation of graphene/silicon Schottky diodes
title Junction investigation of graphene/silicon Schottky diodes
title_full Junction investigation of graphene/silicon Schottky diodes
title_fullStr Junction investigation of graphene/silicon Schottky diodes
title_full_unstemmed Junction investigation of graphene/silicon Schottky diodes
title_short Junction investigation of graphene/silicon Schottky diodes
title_sort junction investigation of graphene/silicon schottky diodes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512491/
https://www.ncbi.nlm.nih.gov/pubmed/22687246
http://dx.doi.org/10.1186/1556-276X-7-302
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