Cargando…
Junction investigation of graphene/silicon Schottky diodes
Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properti...
Autores principales: | Mohammed, Muatez, Li, Zhongrui, Cui, Jingbiao, Chen, Tar-pin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3512491/ https://www.ncbi.nlm.nih.gov/pubmed/22687246 http://dx.doi.org/10.1186/1556-276X-7-302 |
Ejemplares similares
-
A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals
por: Liu, Chin-Yi, et al.
Publicado: (2010) -
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
por: Chizh, Kirill V, et al.
Publicado: (2013) -
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019) -
High-Voltage β-Ga(2)O(3) Schottky Diode with Argon-Implanted Edge Termination
por: Gao, Yangyang, et al.
Publicado: (2019) -
Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon
por: Zuo, Zewen, et al.
Publicado: (2013)