Gap modification of atomically thin boron nitride by phonon mediated interactions

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phon...

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Detalles Bibliográficos
Autor principal: Hague, James P
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3515422/
https://www.ncbi.nlm.nih.gov/pubmed/22697461
http://dx.doi.org/10.1186/1556-276X-7-303
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author Hague, James P
author_facet Hague, James P
author_sort Hague, James P
collection PubMed
description A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ =1, indicating that a proportion of the measured BN bandgap may have a phonon origin.
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spelling pubmed-35154222012-12-06 Gap modification of atomically thin boron nitride by phonon mediated interactions Hague, James P Nanoscale Res Lett Nano Express A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ =1, indicating that a proportion of the measured BN bandgap may have a phonon origin. Springer 2012-06-14 /pmc/articles/PMC3515422/ /pubmed/22697461 http://dx.doi.org/10.1186/1556-276X-7-303 Text en Copyright ©2012 Hague; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License(http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Hague, James P
Gap modification of atomically thin boron nitride by phonon mediated interactions
title Gap modification of atomically thin boron nitride by phonon mediated interactions
title_full Gap modification of atomically thin boron nitride by phonon mediated interactions
title_fullStr Gap modification of atomically thin boron nitride by phonon mediated interactions
title_full_unstemmed Gap modification of atomically thin boron nitride by phonon mediated interactions
title_short Gap modification of atomically thin boron nitride by phonon mediated interactions
title_sort gap modification of atomically thin boron nitride by phonon mediated interactions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3515422/
https://www.ncbi.nlm.nih.gov/pubmed/22697461
http://dx.doi.org/10.1186/1556-276X-7-303
work_keys_str_mv AT haguejamesp gapmodificationofatomicallythinboronnitridebyphononmediatedinteractions

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