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Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity
We report on the Mg-doped, indium-rich Ga(x)In(1−x)N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <T < 300 K. In the Mg-doped material however, where...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519824/ https://www.ncbi.nlm.nih.gov/pubmed/23075073 http://dx.doi.org/10.1186/1556-276X-7-574 |
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author | Balkan, Naci Tiras, Engin Erol, Ayse Gunes, Mustafa Ardali, Sukru Arikan, MCetin Lagarde, Dalphine Carrère, Helene Marie, Xavier Gumus, Cebrail |
author_facet | Balkan, Naci Tiras, Engin Erol, Ayse Gunes, Mustafa Ardali, Sukru Arikan, MCetin Lagarde, Dalphine Carrère, Helene Marie, Xavier Gumus, Cebrail |
author_sort | Balkan, Naci |
collection | PubMed |
description | We report on the Mg-doped, indium-rich Ga(x)In(1−x)N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <T < 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at T > 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A(0) binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV. |
format | Online Article Text |
id | pubmed-3519824 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-35198242012-12-12 Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity Balkan, Naci Tiras, Engin Erol, Ayse Gunes, Mustafa Ardali, Sukru Arikan, MCetin Lagarde, Dalphine Carrère, Helene Marie, Xavier Gumus, Cebrail Nanoscale Res Lett Nano Express We report on the Mg-doped, indium-rich Ga(x)In(1−x)N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <T < 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at T > 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A(0) binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV. Springer 2012-10-18 /pmc/articles/PMC3519824/ /pubmed/23075073 http://dx.doi.org/10.1186/1556-276X-7-574 Text en Copyright ©2012 Balkan et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Balkan, Naci Tiras, Engin Erol, Ayse Gunes, Mustafa Ardali, Sukru Arikan, MCetin Lagarde, Dalphine Carrère, Helene Marie, Xavier Gumus, Cebrail Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity |
title | Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity |
title_full | Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity |
title_fullStr | Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity |
title_full_unstemmed | Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity |
title_short | Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity |
title_sort | acceptor formation in mg-doped, indium-rich ga(x)in(1−x)n: evidence for p-type conductivity |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519824/ https://www.ncbi.nlm.nih.gov/pubmed/23075073 http://dx.doi.org/10.1186/1556-276X-7-574 |
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