Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy

The nanoscale electrical properties of individual self-assembled GeSi quantum rings (QRs) were studied by scanning probe microscopy-based techniques. The surface potential distributions of individual GeSi QRs are obtained by scanning Kelvin microscopy (SKM). Ring-shaped work function distributions a...

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Detalles Bibliográficos
Autores principales: Lv, Yi, Cui, Jian, Jiang, Zuimin M, Yang, Xinju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3524759/
https://www.ncbi.nlm.nih.gov/pubmed/23194252
http://dx.doi.org/10.1186/1556-276X-7-659
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author Lv, Yi
Cui, Jian
Jiang, Zuimin M
Yang, Xinju
author_facet Lv, Yi
Cui, Jian
Jiang, Zuimin M
Yang, Xinju
author_sort Lv, Yi
collection PubMed
description The nanoscale electrical properties of individual self-assembled GeSi quantum rings (QRs) were studied by scanning probe microscopy-based techniques. The surface potential distributions of individual GeSi QRs are obtained by scanning Kelvin microscopy (SKM). Ring-shaped work function distributions are observed, presenting that the QRs' rim has a larger work function than the QRs' central hole. By combining the SKM results with those obtained by conductive atomic force microscopy and scanning capacitance microscopy, the correlations between the surface potential, conductance, and carrier density distributions are revealed, and a possible interpretation for the QRs' conductance distributions is suggested.
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spelling pubmed-35247592012-12-21 Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy Lv, Yi Cui, Jian Jiang, Zuimin M Yang, Xinju Nanoscale Res Lett Nano Express The nanoscale electrical properties of individual self-assembled GeSi quantum rings (QRs) were studied by scanning probe microscopy-based techniques. The surface potential distributions of individual GeSi QRs are obtained by scanning Kelvin microscopy (SKM). Ring-shaped work function distributions are observed, presenting that the QRs' rim has a larger work function than the QRs' central hole. By combining the SKM results with those obtained by conductive atomic force microscopy and scanning capacitance microscopy, the correlations between the surface potential, conductance, and carrier density distributions are revealed, and a possible interpretation for the QRs' conductance distributions is suggested. Springer 2012-11-29 /pmc/articles/PMC3524759/ /pubmed/23194252 http://dx.doi.org/10.1186/1556-276X-7-659 Text en Copyright ©2012 Lv et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Lv, Yi
Cui, Jian
Jiang, Zuimin M
Yang, Xinju
Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
title Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
title_full Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
title_fullStr Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
title_full_unstemmed Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
title_short Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
title_sort nanoscale electrical property studies of individual gesi quantum rings by conductive scanning probe microscopy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3524759/
https://www.ncbi.nlm.nih.gov/pubmed/23194252
http://dx.doi.org/10.1186/1556-276X-7-659
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