Cargando…
The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys
Electronic transport in unintentionally doped Ga(x)In(1-x)N alloys with various Ga concentrations (x = 0.06, 0.32 and 0.52) is studied. Hall effect measurements are performed at temperatures between 77 and 300 K. Temperature dependence of carrier mobility is analysed by an analytical formula based o...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526395/ https://www.ncbi.nlm.nih.gov/pubmed/22937902 http://dx.doi.org/10.1186/1556-276X-7-490 |
_version_ | 1782253550670184448 |
---|---|
author | Donmez, Omer Gunes, Mustafa Erol, Ayse Arikan, Cetin M Balkan, Naci Schaff, William J |
author_facet | Donmez, Omer Gunes, Mustafa Erol, Ayse Arikan, Cetin M Balkan, Naci Schaff, William J |
author_sort | Donmez, Omer |
collection | PubMed |
description | Electronic transport in unintentionally doped Ga(x)In(1-x)N alloys with various Ga concentrations (x = 0.06, 0.32 and 0.52) is studied. Hall effect measurements are performed at temperatures between 77 and 300 K. Temperature dependence of carrier mobility is analysed by an analytical formula based on two-dimensional degenerate statistics by taking into account all major scattering mechanisms for a two-dimensional electron gas confined in a triangular quantum well between Ga(x)In(1-x)N epilayer and GaN buffer. Experimental results show that as the Ga concentration increases, mobility not only decreases drastically but also becomes less temperature dependent. Carrier density is almost temperature independent and tends to increase with increasing Ga concentration. The weak temperature dependence of the mobility may be attributed to screening of polar optical phonon scattering at high temperatures by the high free carrier concentration, which is at the order of 10(14) cm(−2). In our analytical model, the dislocation density is used as an adjustable parameter for the best fit to the experimental results. Our results reveal that in the samples with lower Ga compositions and carrier concentrations, alloy and interface roughness scattering are the dominant scattering mechanisms at low temperatures, while at high temperatures, optical phonon scattering is the dominant mechanism. In the samples with higher Ga compositions and carrier concentrations, however, dislocation scattering becomes more significant and suppresses the effect of longitudinal optical phonon scattering at high temperatures, leading to an almost temperature-independent behaviour. |
format | Online Article Text |
id | pubmed-3526395 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-35263952012-12-21 The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys Donmez, Omer Gunes, Mustafa Erol, Ayse Arikan, Cetin M Balkan, Naci Schaff, William J Nanoscale Res Lett Nano Express Electronic transport in unintentionally doped Ga(x)In(1-x)N alloys with various Ga concentrations (x = 0.06, 0.32 and 0.52) is studied. Hall effect measurements are performed at temperatures between 77 and 300 K. Temperature dependence of carrier mobility is analysed by an analytical formula based on two-dimensional degenerate statistics by taking into account all major scattering mechanisms for a two-dimensional electron gas confined in a triangular quantum well between Ga(x)In(1-x)N epilayer and GaN buffer. Experimental results show that as the Ga concentration increases, mobility not only decreases drastically but also becomes less temperature dependent. Carrier density is almost temperature independent and tends to increase with increasing Ga concentration. The weak temperature dependence of the mobility may be attributed to screening of polar optical phonon scattering at high temperatures by the high free carrier concentration, which is at the order of 10(14) cm(−2). In our analytical model, the dislocation density is used as an adjustable parameter for the best fit to the experimental results. Our results reveal that in the samples with lower Ga compositions and carrier concentrations, alloy and interface roughness scattering are the dominant scattering mechanisms at low temperatures, while at high temperatures, optical phonon scattering is the dominant mechanism. In the samples with higher Ga compositions and carrier concentrations, however, dislocation scattering becomes more significant and suppresses the effect of longitudinal optical phonon scattering at high temperatures, leading to an almost temperature-independent behaviour. Springer 2012-08-31 /pmc/articles/PMC3526395/ /pubmed/22937902 http://dx.doi.org/10.1186/1556-276X-7-490 Text en Copyright ©2012 Donmez et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Donmez, Omer Gunes, Mustafa Erol, Ayse Arikan, Cetin M Balkan, Naci Schaff, William J The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys |
title | The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys |
title_full | The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys |
title_fullStr | The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys |
title_full_unstemmed | The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys |
title_short | The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys |
title_sort | role of dislocation-induced scattering in electronic transport in ga(x)in(1-x)n alloys |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526395/ https://www.ncbi.nlm.nih.gov/pubmed/22937902 http://dx.doi.org/10.1186/1556-276X-7-490 |
work_keys_str_mv | AT donmezomer theroleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT gunesmustafa theroleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT erolayse theroleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT arikancetinm theroleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT balkannaci theroleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT schaffwilliamj theroleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT donmezomer roleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT gunesmustafa roleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT erolayse roleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT arikancetinm roleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT balkannaci roleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys AT schaffwilliamj roleofdislocationinducedscatteringinelectronictransportingaxin1xnalloys |