The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys

Electronic transport in unintentionally doped Ga(x)In(1-x)N alloys with various Ga concentrations (x = 0.06, 0.32 and 0.52) is studied. Hall effect measurements are performed at temperatures between 77 and 300 K. Temperature dependence of carrier mobility is analysed by an analytical formula based o...

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Detalles Bibliográficos
Autores principales: Donmez, Omer, Gunes, Mustafa, Erol, Ayse, Arikan, Cetin M, Balkan, Naci, Schaff, William J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526395/
https://www.ncbi.nlm.nih.gov/pubmed/22937902
http://dx.doi.org/10.1186/1556-276X-7-490

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526395/
https://www.ncbi.nlm.nih.gov/pubmed/22937902
http://dx.doi.org/10.1186/1556-276X-7-490

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