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The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys
Electronic transport in unintentionally doped Ga(x)In(1-x)N alloys with various Ga concentrations (x = 0.06, 0.32 and 0.52) is studied. Hall effect measurements are performed at temperatures between 77 and 300 K. Temperature dependence of carrier mobility is analysed by an analytical formula based o...
Autores principales: | Donmez, Omer, Gunes, Mustafa, Erol, Ayse, Arikan, Cetin M, Balkan, Naci, Schaff, William J |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3526395/ https://www.ncbi.nlm.nih.gov/pubmed/22937902 http://dx.doi.org/10.1186/1556-276X-7-490 |
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