Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice

Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absor...

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Detalles Bibliográficos
Autores principales: Sobolev, Mikhail, Buyalo, Mikhail, Gadzhiev, Idris, Bakshaev, Ilya, Zadiranov, Yurii, Portnoi, Efim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3527133/
https://www.ncbi.nlm.nih.gov/pubmed/23031390
http://dx.doi.org/10.1186/1556-276X-7-545
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author Sobolev, Mikhail
Buyalo, Mikhail
Gadzhiev, Idris
Bakshaev, Ilya
Zadiranov, Yurii
Portnoi, Efim
author_facet Sobolev, Mikhail
Buyalo, Mikhail
Gadzhiev, Idris
Bakshaev, Ilya
Zadiranov, Yurii
Portnoi, Efim
author_sort Sobolev, Mikhail
collection PubMed
description Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absorption coefficients is less by a factor of 1.8 in the entire electroluminescence spectrum range for the superlattice.
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spelling pubmed-35271332012-12-21 Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice Sobolev, Mikhail Buyalo, Mikhail Gadzhiev, Idris Bakshaev, Ilya Zadiranov, Yurii Portnoi, Efim Nanoscale Res Lett Nano Express Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absorption coefficients is less by a factor of 1.8 in the entire electroluminescence spectrum range for the superlattice. Springer 2012-10-02 /pmc/articles/PMC3527133/ /pubmed/23031390 http://dx.doi.org/10.1186/1556-276X-7-545 Text en Copyright ©2012 Sobolev et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Sobolev, Mikhail
Buyalo, Mikhail
Gadzhiev, Idris
Bakshaev, Ilya
Zadiranov, Yurii
Portnoi, Efim
Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
title Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
title_full Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
title_fullStr Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
title_full_unstemmed Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
title_short Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
title_sort room temperature passive mode-locked laser based on inas/gaas quantum-dot superlattice
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3527133/
https://www.ncbi.nlm.nih.gov/pubmed/23031390
http://dx.doi.org/10.1186/1556-276X-7-545
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