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Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells

ABSTRACT: Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on...

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Detalles Bibliográficos
Autores principales: Hüpkes, Jürgen, Owen, Jorj I, Pust, Sascha E, Bunte, Eerke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: WILEY-VCH Verlag 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3531622/
https://www.ncbi.nlm.nih.gov/pubmed/22162035
http://dx.doi.org/10.1002/cphc.201100738
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author Hüpkes, Jürgen
Owen, Jorj I
Pust, Sascha E
Bunte, Eerke
author_facet Hüpkes, Jürgen
Owen, Jorj I
Pust, Sascha E
Bunte, Eerke
author_sort Hüpkes, Jürgen
collection PubMed
description ABSTRACT: Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.
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spelling pubmed-35316222013-01-04 Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells Hüpkes, Jürgen Owen, Jorj I Pust, Sascha E Bunte, Eerke Chemphyschem Minireviews ABSTRACT: Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided. WILEY-VCH Verlag 2012-01-16 2011-12-08 /pmc/articles/PMC3531622/ /pubmed/22162035 http://dx.doi.org/10.1002/cphc.201100738 Text en Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim http://creativecommons.org/licenses/by/2.5/ Re-use of this article is permitted in accordance with the Creative Commons Deed, Attribution 2.5, which does not permit commercial exploitation.
spellingShingle Minireviews
Hüpkes, Jürgen
Owen, Jorj I
Pust, Sascha E
Bunte, Eerke
Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
title Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
title_full Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
title_fullStr Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
title_full_unstemmed Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
title_short Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
title_sort chemical etching of zinc oxide for thin-film silicon solar cells
topic Minireviews
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3531622/
https://www.ncbi.nlm.nih.gov/pubmed/22162035
http://dx.doi.org/10.1002/cphc.201100738
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