Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy

In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of com...

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Detalles Bibliográficos
Autores principales: Picco, Andrea, Bonera, Emiliano, Pezzoli, Fabio, Grilli, Emanuele, Schmidt, Oliver G, Isa, Fabio, Cecchi, Stefano, Guzzi, Mario
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3534003/
https://www.ncbi.nlm.nih.gov/pubmed/23171543
http://dx.doi.org/10.1186/1556-276X-7-633
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author Picco, Andrea
Bonera, Emiliano
Pezzoli, Fabio
Grilli, Emanuele
Schmidt, Oliver G
Isa, Fabio
Cecchi, Stefano
Guzzi, Mario
author_facet Picco, Andrea
Bonera, Emiliano
Pezzoli, Fabio
Grilli, Emanuele
Schmidt, Oliver G
Isa, Fabio
Cecchi, Stefano
Guzzi, Mario
author_sort Picco, Andrea
collection PubMed
description In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.
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spelling pubmed-35340032013-01-03 Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy Picco, Andrea Bonera, Emiliano Pezzoli, Fabio Grilli, Emanuele Schmidt, Oliver G Isa, Fabio Cecchi, Stefano Guzzi, Mario Nanoscale Res Lett Nano Express In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands. Springer 2012-11-21 /pmc/articles/PMC3534003/ /pubmed/23171543 http://dx.doi.org/10.1186/1556-276X-7-633 Text en Copyright ©2012 Picco et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Picco, Andrea
Bonera, Emiliano
Pezzoli, Fabio
Grilli, Emanuele
Schmidt, Oliver G
Isa, Fabio
Cecchi, Stefano
Guzzi, Mario
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
title Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
title_full Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
title_fullStr Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
title_full_unstemmed Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
title_short Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
title_sort composition profiling of inhomogeneous sige nanostructures by raman spectroscopy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3534003/
https://www.ncbi.nlm.nih.gov/pubmed/23171543
http://dx.doi.org/10.1186/1556-276X-7-633
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