Microstructure and optical properties of Pr(3+)-doped hafnium silicate films

In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr(3+)-doped hafnium silicate thin films as a function of annealing temperature (T(A)). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950°C. The HfO(2) phase demonstrates a pronounced crystallization in tetragonal phase upon 950°C annealing. Pr(3+) emission appeared at T(A) = 950°C, and the highest efficiency of Pr(3+) ion emission was detected upon a thermal treatment at 1,000°C. Analysis of the PLE spectra reveals an efficient energy transfer from matrix defects towards Pr(3+) ions. It is considered that oxygen vacancies act as effective Pr(3+) sensitizer. Finally, a PL study of undoped HfO(2) and HfSiO(x) matrices is performed to evidence the energy transfer.